类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 行间距 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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![]() | NTHD5904T1 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | e0 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin/Lead (Sn/Pb) | 20V | 1.1W | C 弯管 | 未说明 | not_compliant | 3.1A | 未说明 | 8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2 N-Channel (Dual) | SWITCHING | 75m Ω @ 3.1A, 4.5V | 600mV @ 250μA | 6nC @ 4.5V | 35ns | 3.1A | 0.075Ohm | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
PMDT290UNEYL | Nexperia USA Inc. | 数据表 | 16000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | SOT-563, SOT-666 | YES | SILICON | 800mA Ta | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101 | 活跃 | 6 | FLAT | 6 | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 500mW Ta | 2 N-Channel (Dual) | SWITCHING | 380m Ω @ 500mA, 4.5V | 950mV @ 250μA | 83pF @ 10V | 0.68nC @ 4.5V | 20V | 0.8A | 0.38Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SC8673010L | Panasonic Electronic Components | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-PowerSMD, Flat Leads | 8 | SILICON | 16A 40A | 2 | 64 ns | -40°C~85°C TJ | Digi-Reel® | 活跃 | 1 (Unlimited) | 6 | EAR99 | 34W | 未说明 | unknown | 未说明 | R-PDSO-F6 | Dual | DEPLETION MODE | 34W | DRAIN | 7 ns | 1.7W 2.5W | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 10m Ω @ 8A, 10V | 3V @ 4.38mA | 5180pF @ 10V | 6.3nC @ 4.5V | 14ns | 9 ns | 40A | 3V | 10A | 0.014Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 950μm | 4.9mm | 5.9mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | STS4C3F60L | STMicroelectronics | 数据表 | 21368 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4A 3A | 2 | 39 ns | -55°C~150°C TJ | Tape & Reel (TR) | STripFET™ | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 低阈值 | 500mW | DUAL | 鸥翼 | 260 | 4A | 30 | STS4C | 8 | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 55m Ω @ 2A, 10V | 1V @ 250μA | 1030pF @ 25V | 20.4nC @ 4.5V | 54ns | N-CHANNEL AND P-CHANNEL | 14.5 ns | 530mA | 16V | 4A | 0.065Ohm | 60V | 16A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | PMWD26UN,518 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | SILICON | 7.8A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | TrenchMOS™ | Obsolete | 1 (Unlimited) | 8 | EAR99 | 鸥翼 | unknown | 8 | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 3.1W | 2 N-Channel (Dual) | SWITCHING | 30m Ω @ 3.5A, 4.5V | 700mV @ 1mA | 1366pF @ 16V | 23.6nC @ 4.5V | 20V | MO-153AB | 5.2A | 7800Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD210802SCL | Advanced Linear Devices Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | 16 | 16-SOIC | 665.986997mg | 80mA | 10 ns | 0°C~70°C TJ | Tube | 2014 | EPAD®, Zero Threshold™ | 活跃 | 1 (Unlimited) | 70°C | 0°C | 500mW | 4 | 500mW | 10 ns | 500mW | 4 N-Channel, Matched Pair | 20mV @ 10μA | 10.6V | 80mA | 10.6V | 10V | 逻辑电平门 | 25Ohm | 1.75mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TSM6968DCA RVG | Taiwan Semiconductor Corporation | 数据表 | 88888 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 6.5A Tc | -55°C~150°C TJ | Digi-Reel® | 2007 | 活跃 | 3 (168 Hours) | 1.04W | 2 N-Channel (Dual) | 22m Ω @ 6A, 4.5V | 1V @ 250μA | 950pF @ 10V | 15nC @ 4.5V | 20V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMC2990UDJQ-7 | Diodes Incorporated | 数据表 | 42888 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | SOT-963 | 450mA Ta 310mA Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101 | e3 | 活跃 | EAR99 | Matte Tin (Sn) | 未说明 | 未说明 | 350mW Ta | N and P-Channel Complementary | 990m Ω @ 100mA, 4.5V, 1.9 Ω @ 100mA, 4.5V | 1V @ 250μA | 27.6pF @ 15V 28.7pF @ 15V | 0.5nC @ 4.5V, 0.4nC @ 4.5V | 20V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6L35FU(TE85L,F) | Toshiba Semiconductor and Storage | 数据表 | 155 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 180mA 100mA | 251 ns | -55°C~150°C TJ | Cut Tape (CT) | 2015 | Discontinued | 1 (Unlimited) | EAR99 | 200mW | 2 | Dual | 增强型MOSFET | 175 ns | N and P-Channel | 3 Ω @ 50mA, 4V | 1V @ 1mA | 9.5pF @ 3V | 20V | N-CHANNEL AND P-CHANNEL | 100mA | -1V | 0.18A | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 1.2V Drive | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N35FE,LM | Toshiba Semiconductor and Storage | 数据表 | 100 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 150°C TJ | Tape & Reel (TR) | 2009 | 活跃 | 1 (Unlimited) | 150mW | unknown | SSM6N35 | 150mW | 2 N-Channel (Dual) | 3 Ω @ 50mA, 4V | 1V @ 1mA | 9.5pF @ 3V | 20V | 180mA | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6P35FE,LM | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | ES6 | 100mA | 150°C | Tape & Reel (TR) | 活跃 | 1 (Unlimited) | 150mW | 150mW | 2 P-Channel (Dual) | 8Ohm @ 50mA, 4V | 1V @ 1mA | 12.2pF @ 3V | 20V | 100mA | 12.2pF | Standard | 8 Ω | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
EMH2411R-TL-H | ON Semiconductor | 数据表 | 2975 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SMD, Flat Lead | YES | 8 | 3.2 μs | 150°C TJ | Tape & Reel (TR) | 2013 | e6 | yes | Obsolete | 1 (Unlimited) | EAR99 | Tin/Bismuth (Sn/Bi) | 1.4W | 8 | Dual | 1.4W | 300 ns | 2 N-Channel (Dual) Common Drain | 36.5m Ω @ 2.5A, 4.5V | 无卤素 | 5.9nC @ 4.5V | 840ns | 30V | 1.65 μs | 5A | 12V | 5A | 30V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 2.5V Drive | 750μm | 2mm | 1.7mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK9MFF-65PSS,518 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 20-SOIC (0.295, 7.50mm Width) | 20 | 13.6A Tc | -55°C~150°C TJ | Tape & Reel (TR) | TrenchPLUS | Obsolete | 1 (Unlimited) | 4.75W Tc | 2 N-Channel (Dual) | 12.3m Ω @ 10A, 10V | 2V @ 1mA | 3052pF @ 25V | 40.2nC @ 5V | 65V | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AOD661 | Alpha & Omega Semiconductor Inc. | 数据表 | 2100 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 12A Tc | -55°C~150°C TJ | Tape & Reel (TR) | 活跃 | 1 (Unlimited) | 15.6W 31W | 2 N-Channel (Dual) | 16.5m Ω @ 12A, 10V, 22.5m Ω @ 9.7A, 10V | 2.5V @ 250μA | 760pF @ 15V | 10nC @ 4.5V, 15nC @ 4.5V | 30V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IXTL2X240N055T | IXYS | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 通孔 | ISOPLUSi5-Pak™ | 5 | SILICON | 2 | 63 ns | -55°C~175°C TJ | Tube | 2007 | TrenchMV™ | yes | Obsolete | 1 (Unlimited) | 5 | EAR99 | 雪崩 额定 | 150W | SINGLE | 未说明 | 未说明 | 5 | 不合格 | COMPLEX | 增强型MOSFET | 150W | ISOLATED | 2 N-Channel (Dual) | SWITCHING | 4.4m Ω @ 50A, 10V | 4V @ 250μA | 7600pF @ 25V | 170nC @ 10V | 54ns | 55V | 75 ns | 140A | 20V | 0.0044Ohm | 55V | 1000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||
FW707-TL-E | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | 150°C TJ | Tape & Reel (TR) | 2010 | e6 | Obsolete | 1 (Unlimited) | Tin/Bismuth (Sn/Bi) | 2.5W | 增强型MOSFET | 2.5W | 2 P-Channel (Dual) | 26m Ω @ 8A, 10V | 900pF @ 10V | 18nC @ 10V | 30V | 8A | 8A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MTMC8E280LBF | Panasonic Electronic Components | 数据表 | 3000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | WMini8-F1 | 7A | 150°C TJ | Tape & Reel (TR) | 2008 | Obsolete | 1 (Unlimited) | 1W | MTMC8E28 | 1W | 2 N-Channel (Dual) | 21mOhm @ 2A, 4.5V | 1.3V @ 1mA | 1500pF @ 10V | 20V | 7A | 1.5nF | Standard | 21 mΩ | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMS001N025DSD | ON Semiconductor | 数据表 | 360000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 23 Weeks | ACTIVE (Last Updated: 3 weeks ago) | 表面贴装 | 8-PowerWDFN | YES | SILICON | 19A Ta 69A Tc 38A Ta 165A Tc | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | Tin (Sn) | 无铅 | 未说明 | not_compliant | 未说明 | R-PDSO-N8 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2.1W Ta 26W Tc 2.3W Ta 42W Tc | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 3.25m Ω @ 19A, 10V, 920μ Ω @ 38A, 10V | 2.5V @ 320μA, 3V @ 1mA | 1370pF 5105pF @ 13V | 30nC, 104nC @ 10V | 25V | 19A | 0.00325Ohm | 381A | 25V | 121 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7755GTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | 3.9A | 2 | Cut Tape (CT) | 2009 | HEXFET® | Obsolete | 1 (Unlimited) | 150°C | -55°C | 1W | IRF7755GPBF | Dual | 1W | 1W | 2 P-Channel (Dual) | 51mOhm @ 3.7A, 4.5V | 1.2V @ 250μA | 1090pF @ 15V | 17nC @ 4.5V | 20V | 3.9A | 20V | -20V | 1.09nF | 逻辑电平门 | 51 mΩ | -1.2 V | 无SVHC | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7105PBF | Infineon Technologies | 数据表 | 5 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 3.5A 2.3A | 2 | -55°C~150°C TJ | Tube | 2003 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DUAL | 鸥翼 | 260 | 30 | IRF7105PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 100m Ω @ 1A, 10V | 3V @ 250μA | 330pF @ 15V | 27nC @ 10V | 25V | N-CHANNEL AND P-CHANNEL | MS-012AA | 3.5A | 0.1Ohm | 14A | 25V | METAL-OXIDE SEMICONDUCTOR | 2W | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7313PBF | Infineon Technologies | 数据表 | 1273 In Stock | - | 最小起订量: 1 最小包装量: 1 | 28 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 6.5A | -55°C~150°C TJ | Tube | 2002 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | IRF7313PBF | 2W | 2 N-Channel (Dual) | 29m Ω @ 5.8A, 10V | 1V @ 250μA | 650pF @ 25V | 33nC @ 10V | 30V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7329PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 9.2A | 2 | 340 ns | -55°C~150°C TJ | Tube | 2004 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 17MOhm | Matte Tin (Sn) | HIGH RELIABILITY | -12V | 2W | 鸥翼 | -9.2A | IRF7329PBF | 6.3 mm | Dual | 增强型MOSFET | 2W | 10 ns | 2 P-Channel (Dual) | SWITCHING | 17m Ω @ 9.2A, 4.5V | 900mV @ 250μA | 3450pF @ 10V | 57nC @ 4.5V | 8.6ns | 12V | 260 ns | -9.2A | -900mV | 8V | -12V | -12V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -900 mV | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
![]() | IRF7341PBF | Infineon Technologies | 数据表 | 12500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 22 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 4.7A | -55°C~150°C TJ | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | IRF7341PBF | 2W | 2 N-Channel (Dual) | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 740pF @ 25V | 36nC @ 10V | 55V | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF8313PBF | Infineon Technologies | 数据表 | 45000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 9.7A | 2 | -55°C~175°C TJ | Tube | 2004 | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 鸥翼 | 未说明 | 未说明 | IRF8313PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 15.5m Ω @ 9.7A, 10V | 2.35V @ 25μA | 760pF @ 15V | 90nC @ 4.5V | 30V | MS-012AA | 9.7A | 0.0155Ohm | 81A | 30V | 46 mJ | METAL-OXIDE SEMICONDUCTOR | 2W | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7311PBF | Infineon Technologies | 数据表 | 40 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 6.6A | -55°C~150°C TJ | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | IRF7311PBF | 2W | 2 N-Channel (Dual) | 29m Ω @ 6A, 4.5V | 700mV @ 250μA | 900pF @ 15V | 27nC @ 4.5V | 20V | 逻辑电平门 | ROHS3 Compliant |
NTHD5904T1
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
PMDT290UNEYL
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
2.891527
SC8673010L
Panasonic Electronic Components
分类:Transistors - FETs, MOSFETs - Arrays
STS4C3F60L
STMicroelectronics
分类:Transistors - FETs, MOSFETs - Arrays
PMWD26UN,518
NXP USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
ALD210802SCL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
TSM6968DCA RVG
Taiwan Semiconductor Corporation
分类:Transistors - FETs, MOSFETs - Arrays
3.232660
DMC2990UDJQ-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
3.180498
SSM6L35FU(TE85L,F)
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
3.157323
SSM6N35FE,LM
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
1.674629
SSM6P35FE,LM
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
EMH2411R-TL-H
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
BUK9MFF-65PSS,518
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
AOD661
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
2.975644
IXTL2X240N055T
IXYS
分类:Transistors - FETs, MOSFETs - Arrays
FW707-TL-E
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
MTMC8E280LBF
Panasonic Electronic Components
分类:Transistors - FETs, MOSFETs - Arrays
FDMS001N025DSD
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
8.047843
IRF7755GTRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7105PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7313PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7329PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7341PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF8313PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7311PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
